Einstein Relation of Two Dimensional Strained Si/Si1-x Gex MOSFETs in Nondegenerate Regime and Degenerate Regime
نویسندگان
چکیده
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ژورنال
عنوان ژورنال: International Journal of Nano Devices, Sensors and Systems (IJ-Nano)
سال: 2012
ISSN: 2089-4848
DOI: 10.11591/ij-nano.v1i1.394